Awards
Future Tech Award, National Science and Technology Council (NSTC), Taiwan
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Research Achievement Award, Taiwan Association of Magnetic Technology
Featured Wise Award, EE Challenge,
EE Awards Asia
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Featured Highlight, Taiwan Innotech Expo
R&D Service Platform Highlight Achievement Award, NARLabs
Excellence Award,
Wahlee Innovative Materials Competition
Overview
SS-MRAM™ is a next-generation magnetic memory technology developed by the MRAM Research Group, led by Prof. Wen-Jeng Hsueh, at National Taiwan University. It addresses key limitations of existing memories such as Flash, DRAM, and STT-MRAM. The core innovation lies in the use of an artificial superlattice material as the tunneling barrier within the magnetic tunnel junction (MTJ), as shown below. This novel barrier design significantly enhances quantum tunneling efficiency and spin polarization, leading to improved read/write performance and endurance, while reducing write energy.
SS-MRAM™ offers superior write endurance and speed, which is predicted to reach SRAM/DRAM endurance levels and operating speeds faster than 10 ns.SS-MRAM™ is particularly suitable for demanding applications such as AI, IoT, edge computing, autonomous vehicles, and high-performance computing (HPC).It is positioned to replace Flash and DRAM in future processor caches. Compared to other emerging memories like RRAM, PCRAM, FeRAM, STT-MRAM, and SOT-MRAM, SS-MRAM™ uniquely combines non-volatility, high speed, low power consumption, and high reliability, while avoiding the large device size and external magnetic field requirements of SOT-MRAM.
Overall, SS-MRAM™ is a breakthrough and commercially promising memory technology, offering a high-performance, high-reliability solution for the next generation of embedded and standalone memory markets worldwide.